TCDT1120/ TCDT1120g document number 83532 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 1 17201_1 65 4 2 3 1 nc c e a (+) c (?) nc v de pb p b -free e3 optocoupler, phototransistor output features extra low coupling capacity - typical 0.2 pf high common mode rejection four ctr groups available lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e76222 system code a, double protection bsi iec60950 iec60065 din en 60747-5-2 (vde0884) din en 60747-5-5 pending fimko applications switch-mode power supplies line receiver computer peripheral interface microprocessor system interface reinforced isolation prov ides circuit protection against electrical shock (safety class ii) circuits for safe protective separation against electri- cal shock according to safety class ii (reinforced iso- lation): for appl. class i - iv at mains voltage 300 v for appl. class i - iii at mains voltage 600 v accord- ing to din en 60747-5-2(vde0884)/ din en 60747- 5-5 pending, table 2. description the TCDT1120(g) series consists of a phototransis- tor optically coupled to a gallium arsenide infrared- emitting diode in a 6-lead plastic dual inline package. the elements are mounted on one leadframe using a coplanar technique , providing a fixed distance between input and output for highest safety require- ments. vde standards these couplers perform safety functions according to the following equipment standards: din en 60747-5-2(vde0884)/ din en 60747-5-5 pending optocoupler for electrical safety requirements iec 60950/en 60950 office machines (applied for rein forced isolation for mains voltage 400 vrms) vde 0804 telecommunication apparatus and data processing iec 60065 safety for mains-operated electronic and related household appa- ratus order information g = leadform 10.16 mm; g is not marked on the body part remarks TCDT1120 ctr > 40 %, dip-6 tcdt1122 ctr 63 - 125 %, dip-6 tcdt1123 ctr 100 - 200 %, dip-6 tcdt1124 ctr 160 - 320 %, dip-6 TCDT1120g ctr > 40 %, dip-6 tcdt1122g ctr 63 - 125 %, dip-6 tcdt1123g ctr 100 - 200 %, dip-6 tcdt1124g ctr 160 - 320 %, dip-6
www.vishay.com 2 document number 83532 rev. 1.6, 26-oct-04 TCDT1120/ TCDT1120g vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input parameter test condition symbol value unit reverse voltage v r 5v forward current i f 60 ma forward surge current t p 10 si fsm 3a power dissipation p diss 100 mw junction temperature t j 125 c parameter test condition symbol value unit collector base voltage v cbo 90 v collector emitter voltage v ceo 90 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation p diss 150 mw junction temperature t j 125 c parameter test condition symbol value unit isolation test voltage (rms) t = 1 min v iso 3750 v rms total power dissipation p tot 250 mw ambient temperature range t amb - 55 to + 100 c storage temperature range t stg - 55 to + 125 c soldering temperature 2 mm from case, t 10 s t sld 260 c parameter test condition symbol min ty p. max unit forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
TCDT1120/ TCDT1120g document number 83532 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 3 output coupler current transfer ratio maximum safety ratings (according to din en 60747-5-2(vde0884)/ din en 60747-5-5 pending) see figure 1 this optocoupler is suitable for safe electric al isolation only within the safety ratings. compliance with the safety ratings shall be ens ured by means of suitable protective circuits. input output parameter test condition symbol min ty p. max unit collector base voltage i c = 100 av cbo 90 v collector emitter voltage i c = 1 ma v ceo 90 v emitter collector voltage i e = 100 av eco 7v collector-emitter cut-off current v ce = 20 v, i f = 0 i ceo 150 na parameter test condition symbol min ty p. max unit collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 ? f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf parameter test condition part symbol min ty p. max unit i c /i f v ce = 5 v, i f = 1 ma TCDT1120 TCDT1120g ctr 10 % tcdt1122 tcdt1122g ctr 15 % tcdt1123 tcdt1123g ctr 30 % tcdt1124 tcdt1124g ctr 60 % v ce = 5 v, i f = 10 ma TCDT1120 TCDT1120g ctr 40 % tcdt1122 tcdt1122g ctr 63 125 % tcdt1123 tcdt1123g ctr 100 200 % tcdt1124 tcdt1124g ctr 160 320 % parameter test condition symbol min ty p. max unit forward current i f 130 ma parameter test condition symbol min ty p. max unit power dissipation p diss 265 mw
www.vishay.com 4 document number 83532 rev. 1.6, 26-oct-04 TCDT1120/ TCDT1120g vishay semiconductors coupler insulation rated parameters switching characteristics parameter test condition symbol min ty p. max unit rated impulse voltage v iotm 6kv safety temperature t si 150 c parameter test condition symbol min ty p. max unit partial discharge test voltage - routine test 100 %, t test = 1 s v pd 1.6 kv partial discharge test voltage - lot test (sample test) t tr = 60 s, t test = 10 s, (see figure 2) v iotm 6kv v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 ? v io = 500 v, t amb 100 c r io 10 11 ? v io = 500 v, t amb 150 c (construction test only) r io 10 9 ? figure 1. derating diagram 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 200 t amb (c) 95 10934 p si (mw) i si (ma) figure 2testpulsediagramforsampletestaccordingtodi 60747-5-2(d0884)di60747-ic60747 t 13930 t 1 t 2 =1to10s t 3 t 4 =1s t test =10s t stres =12s it pd iw ir 0 t 1 t test t tr =60s t stres t 3 t 4 t 2 parameter current delay risetime torage falltime turn-on time turn-off time tu r n - o n time turn-off time testcondition =5r =100 ? (see figure 3) v s = 5 v, r l = 1 k ? (see figure 4) symbol i f t d t r t s t f t on t off t on t off unit ma s s s s s s s s TCDT1120 TCDT1120g 10 2.5 3.0 0.3 3.7 5.5 4.0 16.5 22.5 10 2.5 3.0 0.3 3.7 5.5 4.0 16.5 22.5 tcdt1123 tcdt1123g 10 2.8 4.2 0.3 4.7 7.0 5.0 21.5 37.5 tcdt1124 tcdt1124g 10 2.0 4.0 0.3 4.7 6.0 5.0 20.0 50.0
TCDT1120/ TCDT1120g document number 83532 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 5 typical characteris tics (tamb = 25 c unless otherwise specified) figure 3. switching times figure 4. total power dissipat ion vs. ambient temperature figure 5. forward current vs. forward voltage t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d +t r ) turn-on time t s storage time t f fall time t off (= t s +t f ) turn-of f time 0 50 100 150 200 250 300 0 40 80 120 p Ctotal power dissipation ( mw ) t amb C ambient t emperature( c ) 96 11700 tot coupled device phototransistor ir-diode 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f - forward voltag e(v) 96 11862 f i - forward current ( ma ) figure 6. relative current transfer ratio vs. ambient temperature figure 7. collector dark curre nt vs. ambient temperature figure 8. collector current vs. forward current 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 C30C20C100 1020304050607080 t amb C ambient temperature (c ) 96 11918 ctr C relative current transfer ratio rel v ce =5v i f =10ma 0255075 1 10 100 1000 10000 i C collector dark current, ceo t amb C ambient temperature ( c ) 100 95 11038 with open base ( na) v ce =30v i f =0 0.1 1 10 0.01 0.1 1 100 i C collector current ( ma ) c i f C forward current ( ma ) 100 95 11040 10 v ce =5v
www.vishay.com 6 document number 83532 rev. 1.6, 26-oct-04 TCDT1120/ TCDT1120g vishay semiconductors figure 9. collector current vs. collector emitter voltage figure 10. collector emitter sa turation voltage vs. collector current figure 11. current transfer ratio vs. forward current 0.1 1 10 0.1 1 10 100 v ce C collector emitter voltag e(v) 100 95 11041 i C collector current ( ma ) c 5ma 2ma 1ma i f =50ma 20ma 10ma cny75a 110 0 0.2 0.4 0.6 0.8 1.0 v C collector emitter saturation v oltage (v) cesat i c C collector current ( ma ) 100 ctr=50% 20% 10% 95 11034 cny75a 0.1 1 10 1 10 100 1000 ctr C current transfer ratio ( % ) i f C forward current ( ma ) 100 14796 tcdt1122(g) v ce =5v figure 12.currenttransfer ratiovs.forwardcurrent figure 13.currenttransfer ratiovs.forwardcurrent figure 14.turnon/offtimevs.forwardcurrent 0.1 1 10 1 10 100 1000 ctr C current transfer ratio ( % ) i f C forward current ( ma ) 100 14797 tcdt1123(g) v ce =5v 0.1 1 10 1 10 100 1000 ctr C current transfer ratio ( % ) i f C forward current ( ma ) 100 14798 tcdt1124(g) v ce =5v 0 5 10 15 0 10 20 30 40 50 i f C forward current ( ma ) 20 14799 t / t Cturn on / turn off time ( s ) off on tcdt1122(g) saturated operation v s =5v r l =1k ? t off t on
TCDT1120/ TCDT1120g document number 83532 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 7 figure 15. turn on / off time vs. forward current figure 16. turn on / off time vs. forward current figure 17. turn on / off time vs. collector current 0 5 10 15 0 10 20 30 40 50 i f C forward current ( ma ) 20 14800 t / t Cturn on / turn off time ( s ) off on tcdt1123(g) saturated operation v s =5v r l =1k ? t off t on 0 5 10 15 0 10 20 30 40 50 i f C forward current ( ma ) 20 14801 t / t Cturn on / turn off time ( s ) off on tcdt1124(g) saturated operation v s =5v r l =1k ? t off t on 02 46 i c C collector current ( ma ) 10 14802 t / t Cturn on / turn off time ( s ) off on tcdt1122(g) non saturated operation v s =5v r l =100 ? t off t on 0 5 10 15 20 8 figure 18.turnon/offtimevs.collectorcurrent figure 19.turnon/offtimevs.collectorcurrent 02 46 i c C collector current ( ma ) 10 14803 t / t Cturn on / turn off time ( s ) off on tcdt1123(g) non saturated operation v s =5v r l =100 ? t off t on 0 5 10 15 20 8 02 46 i c C collector current ( ma ) 10 14804 t / t Cturn on / turn off time ( s ) off on tcdt1124(g) non saturated operation v s =5v r l =100 ? t off t on 0 5 10 15 20 8
www.vishay.com 8 document number 83532 rev. 1.6, 26-oct-04 TCDT1120/ TCDT1120g vishay semiconductors package dimensions in mm package dimensions in mm 14770 14771
TCDT1120/ TCDT1120g document number 83532 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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